Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures

摘要

Memory cells are an important building block of digital electronics. Wecombine here the unique electronic properties of semiconducting monolayer MoS2with the high conductivity of graphene to build a 2D heterostructure capable ofinformation storage. MoS2 acts as a channel in an intimate contact withgraphene electrodes in a field-effect transistor geometry. Our prototypicalall-2D transistor is further integrated with a multilayer graphene chargetrapping layer into a device that can be operated as a nonvolatile memory cell.Because of its band gap and 2D nature, monolayer MoS2 is highly sensitive tothe presence of charges in the charge trapping layer, resulting in a factor of10000 difference between memory program and erase states. The two-dimensionalnature of both the contact and the channel can be harnessed for the fabricationof flexible nanoelectronic devices with large-scale integration.